Research on Synthesis and Optical Testing of Silicon Carbide Nanostructures

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Authors

  • Hebei Key Laboratory of Data Science and Applications, North China University of Science and Technology, Tangshan, 063000 ,CN
  • Hebei Key Laboratory of Data Science and Applications, North China University of Science and Technology, Tangshan, 063000 ,CN
  • Hebei Key Laboratory of Data Science and Applications, North China University of Science and Technology, Tangshan, 063000 ,CN
  • Hebei Key Laboratory of Data Science and Applications, North China University of Science and Technology, Tangshan, 063000 ,CN
  • Hebei Key Laboratory of Data Science and Applications, North China University of Science and Technology, Tangshan, 063000 ,CN

Keywords:

Optical testing, silicon carbide nanostructures, XRD diffraction pattern,infrared spectrogram

Abstract

As a wide band gap semiconductor material silicon carbide, with a stable chemical properties and good thermal conductivity of physical properties, in addition to the mechanical properties of the material also has a strong advantage. In order to explore more scientific and practical nanomaterials, this paper studies the preparation process of silicon carbide nanomaterials and the optical characterization of the materials, and analyzes the properties of the materials, 3C-SiC nanowires and 3C-SiC micron polyhedra, XRD patterns, infrared spectra, Raman spectra, thermogravimetric curves and room temperature photoluminescence spectra. By studying the experimental results of optical properties, it is concluded that silicon carbide products have great application prospect in optoelectronic devices.

 

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Published

2022-10-20

How to Cite

Yang, A.-M., Yang, X.-L., Ren, C.-H., Xu, X.-Y., & Ren, C.-R. (2022). Research on Synthesis and Optical Testing of Silicon Carbide Nanostructures. Journal of Mines, Metals and Fuels, 67(3), 170–174. Retrieved from https://informaticsjournals.com/index.php/jmmf/article/view/31539

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References

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